Package structure, electronic device and method of fabricating package structure

ABSTRACT

In accordance with some embodiments, a package structure includes an RFIC chip. an insulating encapsulation, a redistribution circuit structure, an antenna and a microwave director. The insulating encapsulation encapsulates the RFIC chip. The redistribution circuit structure is disposed on the insulating encapsulation and electrically connected to the RFIC chip. The antenna is disposed on the insulating encapsulation and electrically connected to the RFIC chip through the redistribution circuit structure. The antenna is located between the microwave director and the RFIC chip. The microwave director has a microwave directivity enhancement surface located at a propagating path of a microwave received or generated by the antenna.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. application Ser.No. 15/717,976, filed on Sep. 28, 2017, now allowed. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of various electroniccomponents (i.e., transistors, diodes, resistors, capacitors, etc.). Forthe most part, this improvement in integration density has come fromrepeated reductions in minimum feature size, which allows more of thesmaller components to be integrated into a given area. These smallerelectronic components also require smaller packages that utilize lessarea than previous packages. Some smaller types of packages forsemiconductor components include quad flat packages (QFPs), pin gridarray (PGA) packages, ball grid array (BGA) packages, and so on.Currently, a technique of integrated fan-out (INFO) packages having morecompactness is developed and utilized in various package applications.

For example, the INFO package is utilized for packaging a radiofrequency integrated circuit (RFIC) chip with an integrated antenna.However, the performance of the antenna still need be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 schematically illustrates a package structure in accordance withsome embodiments of the disclosure.

FIG. 2 schematically illustrates a top view of the microwave director inaccordance with some embodiments of the disclosure.

FIG. 3 schematically illustrate a package structure in accordance withsome embodiments of the disclosure.

FIG. 4 to FIG. 16 schematically illustrate a process of the method offabricating a package structure in accordance with some embodiments ofthe disclosure.

FIG. 17 and FIG. 18 schematically illustrate a method of fabricating amicrowave director in accordance with some embodiments of thedisclosure.

FIG. 19 schematically illustrates a method of fabricating a microwavedirector in accordance with some embodiments of the disclosure.

FIG. 20 and FIG. 21 schematically illustrate a method of forming amicrowave director array on a package array in accordance with someembodiments of the disclosure.

FIG. 22 and FIG. 23 schematically illustrate a method of forming amicrowave director array on a package array in accordance with someembodiments of the disclosure.

FIG. 24 schematically illustrates a portion of an electronic device inaccordance with some embodiments of the disclosure.

FIG. 25 schematically illustrates a cross section of an electronicdevice in accordance with some embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1 schematically illustrates a package structure in accordance withsome embodiments of the disclosure. In FIG. 1, the package structure 10includes an integrated fan-out (INFO) package 100 and a microwavedirector 200 disposed on the INFO package 100. The INFO package 100 mayat least include a radio frequency integrated circuit (RFIC) chip 110,an insulating encapsulation 120, a redistribution circuit structure 130,and an antenna 140. The insulating encapsulation 120 encapsulates theRFIC chip 110. The redistribution circuit structure 130 is disposed onthe insulating encapsulation 120 and electrically connected to the RFICchip 110. The antenna 140 is disposed on the insulating encapsulation120, where the antenna 140 is disposed to be located between the RFICchip 110 and the microwave director 200 and the antenna 140 iselectrically connected to the RFIC chip 110 through the redistributioncircuit structure 130. In other words, the RFIC chip 110 and the antenna140 are integrated in the INFO package 100. The microwave director 200has a microwave directivity enhancement surface 200S located at apropagating path of a microwave received or generated by the antenna140. In some embodiments, the microwave directivity enhancement surface200S may be able to direct the propagating path of the microwavereceived or generated by the antenna 140 and enhance the antenna gain ofthe antenna 140.

In certain embodiments, the INFO package 100 may further include abackside redistribution circuit structure 150, an isolation layer 160, athrough via 170, a through via 180, and a connecting pad 190 asillustrated in FIG. 1. The backside redistribution circuit structure 150is located between the antenna 140 and the RFIC chip 110. The isolationlayer 160 is disposed between the antenna 140 and the backsideredistribution circuit structure 150. The isolation layer 160 is formedbetween the antenna 140 and the backside redistribution circuitstructure 150. In some embodiments, a material of the isolation layer160 may have low dissipation factor (Df). For example, the Df of theisolation layer 160 may be lower than that of the insulatingencapsulation 120. Alternatively, the Df of the isolation layer 160 maybe not greater than 0.01. In some alternative embodiments, a material ofthe isolation layer 160 may be the same as a material of the insulatingencapsulation 120. The backside redistribution circuit structure 150 maybe electrically connected to the antenna 140 through the through via 170to serve as a feed line circuit and may include a ground plane (notshown) opposite to the antenna 140. The redistribution circuit structure130 may be electrically connected to the backside redistribution circuitstructure 150 through the through via 180, such that the antenna 140 maybe electrically connected to the RFIC chip 110 through theredistribution circuit structure 130. The insulating encapsulation 120is formed between the backside redistribution circuit structure 150 andthe redistribution circuit structure 130 to encapsulate the RFIC chip110. The connecting pad 190 is formed to be electrically connected tothe redistribution circuit structure 130 and is exposed at a side of theINFO package 100. A conductive bump 300 may be formed on the connectingpad 190 for bonding to an external component such as a circuit board. Insome alternative embodiments, the antenna 140 may be integrated in theINFO package 100 in an alternative manner. Specifically, the antenna 140may be formed by the conductive layer in the backside redistributioncircuit structure 150 such that the isolation layer 160 and the throughvia 170 shown in FIG. 1 may be omitted. In some further embodiments, aground plane (not shown) may be disposed opposite to the antenna 140 andt antenna 140 and/or the ground plane may be formed by the conductivelayers in the backside redistribution circuit structure 150 such thatthe isolation layer 160 and the through via 170 shown in FIG. 1 may beomitted.

The microwave director 200 may include a lens portion 210, an extensionportion 220 and a base portion 230, and may be made of a dielectricmaterial such as PMMA (Poly(methyl methacrylate)), PC (polycarbonate),epoxy, etc. In some alternative embodiments, the microwave director 200may be made of a materiel capable of permitting a microwave to pass itthrough and directing the propagating direction of the microwave. Theextension portion 220 is located between the lens portion 210 and thebase portion 230, and the base portion 230 is located between theextension portion 220 and the antenna 140. In other words, the baseportion 230, the extension portion 220 and the lens portion 210 arestacked in turn on the antenna 140 of the INFO package 100. The lensportion 210 is a portion of the microwave director 200 relativelyfarther from the antenna 140 of the INFO package 100 than the restportions. In some embodiments, the lens portion 210, the extensionportion 220 and the base portion 230 may be formed integrally, but thedisclosure is not limited thereto. A thickness of the base portion 230and the extension portion 220 helps to keep a distance T between thelens portion 210 and the antenna 140 of the INFO package 100. Thedistance T between the lens portion 210 and the antenna 140 of the INFOpackage 100 may be adjusted based on the design (the power, thefrequency, the size, etc.) of the antenna 140. For example, the distanceT between the lens portion 210 and the antenna 140 may be greater than 0and smaller than or equal to 1.5 times of the diameter of the lensportion 210. In an instance, for an INFO package having a size of 16mm×16 mm, the thickness of the base portion 230 and the extensionportion 220 may be 5.6 mm, but the disclosure is not limited thereto. Inan alternative embodiment, an INFO package having a size of 15 mm×15 mmmay include an antenna distributed in an area of 13 mm×13 mm and themicrowave director disposed on such INFO package may have a height of12.5 mm and an area not greater than 15 mm×15 mm. In a case such INFOpackage is disposed with a microwave director thereon, the antenna gainmay be greater than 25 dBi. By contrast, in the case such INFO packageis not provided with a microwave director, the antenna gain may be lessthan 20 dBi, for example 15.6 dBi.

In certain embodiments, a width W210 of the lens portion 210 may not beconstant and may be gradually reduced in a direction D away from theantenna 140. The lens portion 210 of the microwave director 200 has themicrowave directivity enhancement surface 200S capable of directing thepropagating path of the microwave received or generated by the antenna140. In some embodiments, the propagating path of the microwave receivedor generated by the antenna 140 may be more concentrated in apredetermined direction by passing through the microwave directivityenhancement surface 200S. As such, the directivity of the microwave maybe enhances by the microwave directivity enhancement surface 200S so asto enhance the efficiency of the antenna 140. In some embodiments, thelens portion 210 has a dome-like shape, and the microwave directivityenhancement surface 200S may be a spherical surface or an asphericalsurface. In some alternative embodiments, the lens portion 210 may havea Fresnel lens structure and may include multiple curved surfacesections serving as the microwave directivity enhancement surface. Thecurvature of the microwave directivity enhancement surface 200S may beadjusted based on the design (the power, the frequency, the size, etc.)of the antenna 140. The lens portion 210 may be aligned with thegeometry of the antenna 140 in some embodiments, but the disclosure isnot limiter thereto. In some alternative embodiments, the antenna 140may include a plurality of patches 140A, where the microwave directivityenhancement surface 200S substantially covers the patches 140A of theantenna 140. In the top view, the patches 140A may be located within thearea of an orthogonal projection of the microwave directivityenhancement surface 200S on a plane of the antenna 140.

The width W210 of the lens portion 210 may be not greater than a widthW220 of the extension portion 220. In some embodiments, the width W220of the extension portion 220 may be substantially constant and agreatest width of the width W210 of the lens portion 210 may beidentical to the width W220 of the extension portion 220 so that thereis no sharp alternation of width between the lens portion 210 and theextension portion 220. In other words, the microwave director 200 mayhave a smooth outline at the boundary between the lens portion 210 andthe extension portion 220. In some alternative embodiments, the widthW220 of the extension portion 220 may not be limited to be constant. Thelens portion 210 and the extension portion 220 may be defined based onthe altering rates of width. For example, the lens portion 210 may bedefined as a portion having higher altering rate of width and theextension portion 220 may be defined as a portion having lower alteringrate of width.

In some embodiments, a width W230 of the base portion 230 is larger thanthe width W220 of the extension portion 220. The base portion 230 may bea widest portion of the microwave director 200. The base portion 230 mayinclude a flange portion 230A exceeding the extension portion 220. FIG.2 schematically illustrates a top view of the microwave director inaccordance with some embodiments of the disclosure. As shown in FIG. 2,from the top view, the flange portion 230A of the base portion 230 mayhave an inner periphery 230A1 and an outer periphery 230A2. In someembodiments, the outer periphery of the lens portion 210 may be alignedwith the inner periphery 230A1 of the base portion 230. An area of themicrowave directivity enhancement surface 200S may be located within thearea surrounded by the inner periphery 230A1 of the flange portion 230A.In the case the area surrounded by the inner periphery 230A1 of theflange portion 230A is A1 and the area surrounded by the outer periphery230A2 of the flange portion 230A is A2, A1≤A2. In some embodiments, therelationship of A1 and A2 may be 0.5*A2≤A1≤A2. In some alternativeembodiments, the outer periphery 230A2 may be aligned with the edge ofthe INFO package 100 as shown in FIG. 1 such that the size of themicrowave director 200 may be identical to the size of the INFO package100, or shrink from the edge of the INFO package 100 such that the sizeof the microwave director 200 may be smaller than the size of the INFOpackage 100. The size may represent the area surrounded by the outermostperiphery of each component measured in the top view in which the X-Yplane is seen.

FIG. 3 schematically illustrates a package structure in accordance withsome embodiments of the disclosure. In FIG. 3, an INFO package structure12 includes an INFO package 100 and a microwave director 202 disposed onthe INFO package 100. The INFO package 100 may be substantially similarto the INFO package 100 described in FIG. 1 and includes an RFIC chip110, an insulating encapsulation 120, a redistribution circuit structure130, an antenna 140, a backside redistribution circuit structure 150, anisolation layer 160, a through via 170, a through via 180, and aconnecting pad 190, wherein a conductive bump 300 may be formed on theconnecting pad 190 for bonding to an external component such as acircuit board. The antenna 140 is disposed to be located between theRFIC chip 110 and the microwave director 202 and the microwave director202 is substantially located at a propagating path of a microwavereceived or generated by the antenna 140. In some embodiments, themicrowave director 202 may have a structure capable of directing thepropagating path of the microwave received or generated by the antenna140 and enhancing the antenna gain of the antenna 140. In addition, themicrowave director 202 may be hollow and a hollow space V is demarcatedby the microwave director 202.

The microwave director 202 may have a shell shape and made of dielectricmaterial. The microwave director 202 may include a lens portion 212, anextension portion 222 and a base portion 232, where the base portion 232is located between the INFO package 100 and the extension portion 222,and the extension portion 222 is located between the base portion 232and the lens portion 212. The lens portion 212 may have a spherical oran aspherical cap-like shape such that the microwave director 202 mayinclude a microwave directivity enhancement surface 202S capable ofdirecting the propagating path of the microwave received or generated bythe antenna 140. The extension portion 222 may have a cylinder shapeextending toward the INFO package 100 from the lens portion 212. Theextension portion 222 may keep a distance between the antenna 140 andthe microwave directivity enhancement surface 202S. The base portion 232may extend laterally to exceed the extension portion 222. In someembodiments, the base portion 232 laterally exceeding the extensionportion 222 is conducive to ensure the connection between the microwavedirector 202 and the INFO package 100. The microwave director 202 havinga shell shape may have a thickness T202. In some embodiments, thethickness T202 may be constant so that the inner surface and the outersurface of the microwave director 202 may be conformal, but thedisclosure is not limited thereto. In some alternative embodiments, thethickness T202 at the lens portion 212 may be different from that at theextension portion 222. Alternatively, the thickness T202 at the lensportion 212 may be inconsistent.

FIG. 4 to FIG. 16 schematically illustrate a process of the method offabricating a package structure in accordance with some embodiments ofthe disclosure. Referring to FIG. 4, a carrier 400 having a plurality ofunit regions R is provided. A dielectric layer 402 and an antenna 140are formed on the carrier 400 at a respective unit region R. In someembodiments, the carrier 400 may be a substrate with sufficient rigidityor stiffness for providing a solid stand for the subsequent process. Thecarrier 400 may be, but not limited to a glass substrate. In someembodiments, the carrier 400 may be removed from the device formedthereon so as to finish the final device and thus a temporary adhesivelayer not shown may be formed on the carrier 400 for connecting thedielectric layer 402 and the carrier 400 during fabrication. Thetemporary adhesive layer may be made of glue material or formed by aplurality of layers including at least one glue layer and at least onepolymer layer. In some embodiments, the antenna 140 in each unit regionR may include a plurality of patches 140A, but the disclosure is notlimited thereto. The structure and pattern of the antenna 140 may bedetermined based on the product design requirements. In someembodiments, a metal layer is formed on the dielectric layer 402 bychemical vapor deposition (CVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), high density plasma CVD (HDPCVD), other suitablemethods, and/or combinations thereof and the metal layer is patterned toform the antenna 140.

Referring to FIG. 5, a through via 170 is formed on the antenna 140 ineach unit region R. In some embodiments, the through via 170 may befabricated by the following process. A patterned layer (not shown)having openings is formed on the carrier 400, and the openings of thepatterned layer may expose a portion of the antenna 140. Subsequently, aconductive material fills into the openings of the pattern layer to formthe through via 170 by chemical vapor deposition (CVD), physical vapordeposition (PVD), atomic layer deposition (ALD), high density plasma CVD(HDPCVD), plating, other suitable methods, and/or combinations thereof.The conductive material includes, for example, titanium, tungsten,aluminum, copper, metal alloys, metal silicide, other suitablematerials, and/or combinations thereof. In some embodiment, thethickness of the pattern layer may be determined based on the requiredheight of the through via 170. Subsequent to the formation of thethrough via 170, the pattern layer is removed such that the structure asshown in FIG. 5 is achieved.

In FIG. 6, an isolation layer 160 is formed on the carrier 400. Theisolation layer 160 covers the antenna 140 and surrounds the through via170. A material of the isolation layer 160 may be dielectric materialallowing the microwave to pass it through. In some embodiments, theisolation layer 160 may have low Df. In some alternative embodiments, amaterial of the isolation layer 160 may be a resin capable of beingcured through a thermal cure process or UV cure process. Subsequent tothe formation of the isolation layer 160, a planarization process may beperformed so that the surface of the isolation layer 160 is planar andthe through via 170 is exposed. In some embodiments, the planarizationprocess includes a Chemical-Mechanical Planarization (CMP), a polishingprocess or the like.

In FIG. 7, a backside redistribution circuit structure 150 is formed onthe isolation layer 160 in each unit region R. In some embodiments, thebackside redistribution circuit structure 150 may include at least oneconductor such as conductive trace distributed in at least one layer ofdielectric material. The conductive traces may provide a predeterminedlayout for mapping the required electrical conduction paths. Inaddition, the backside redistribution circuit structure 150 may beconnected to the through via 170 so that the antenna 140 may beelectrically connected to the backside redistribution circuit structure150 through the through via 170.

In FIGS. 8 and 9, a dielectric layer 404 is formed on the backsideredistribution circuit structure 150 and a through via 180 issubsequently formed on the dielectric layer 404. The dielectric layer404 may be formed to cover the backside redistribution circuit structure150 in each unit region R and having openings 404A exposing a portion ofthe backside redistribution circuit structure 150. The through via 180is formed on the dielectric layer 404 and in contact with the portion ofthe backside redistribution circuit structure 150 exposed by the opening404A so that the through via 180 is electrically connected to thebackside redistribution circuit structure 150.

In FIG. 10, an RFIC chip 110 is picked up and placed on the dielectriclayer 404 in each unit region R. The RFIC chip 110 is attached on thedielectric layer 404 in a manner the active surface 110A facing upwardsas oriented in this illustrative example and the location of the RFICchip 110 is substantially above the backside redistribution circuitstructure 150 and the antenna 140. In some embodiments, the RFIC chip110 is attached on the dielectric layer 404 by using a die attach film406.

Subsequent to the attachment of the RFIC chip 110 onto the dielectriclayer 404, an insulating encapsulation 120 is formed to encapsulate theRFIC chip 110 and the through via 180 as shown in FIG. 11. A material ofthe insulating encapsulation 120 may be a resin capable of being curedthrough a thermal cure process or UV cure process. In some embodiments,a material of the insulating encapsulation 120 may be similar to or thesame as a material of the isolation layer 160. Subsequent to theencapsulation process, a planarization process may be performed so thatthe surface of the insulating encapsulation 120 is planar. In someembodiments, the planarization process includes a Chemical-MechanicalPlanarization (CMP), a polishing process or the like.

In FIG. 12, a redistribution circuit structure 130 connecting to oneRFIC chip 110 is formed on the insulating encapsulation 120. Theredistribution circuit structure 130 may include at least one conductorsuch as copper trace distributed in at least one layer of dielectricmaterial. In an example, the conductive traces may provide apredetermined layout for mapping the electrical conduction paths of theRFIC chip 110 and the through via 180. In some embodiment, theredistribution circuit structure 130 may be electrically connected tothe antenna 140 through the through via 180, the backside redistributioncircuit structure 150 and the through via 170. In addition, a connectingpad 190 may be formed on the redistribution circuit structure 130 and asshown in FIG. 13, a conductive bump 300 may be formed on the connectingpad 190 for bonding to an external component such as a circuit board.The conductive bump 300 may be controlled collapsing chip connectors(“C4”), solder bumps, or other connectors for connecting to an externaldevice. In some alternative embodiments, the connecting pad 190 may beomitted and the conductive bump 300 may be in direct connected to theconductive traces (not shown) of the redistribution circuit structure130.

Next, as shown in FIG. 14, the structure fabricated by performing thesteps of FIGS. 4 to 13 is mounted on a support frame 408 and a debondingprocess is performed to remove the carrier 400 to form a package array410. In some embodiments, the debonding process may include applying anenergy beam to the boundary between the carrier 400 and the packagearray 410 where a temporary adhesive layer may be formed. The energybeam may be a laser beam with sufficient energy to deteriorate theadhesive property of the temporary adhesive layer, such that the carrier400 can be removed from the package array 410. The package array 410 mayinclude a plurality of INFO package units 100′. The INFO package units100′ are connected to one another, where the isolation layer 160 and theinsulating encapsulation 120 may continuously extend among the INFOpackage units 100′. In addition, each of the INFO package units 100′includes the RFIC chip 110, the redistribution circuit structure 130 andthe antenna 140, where the antenna 140 is electrically connected to theRFIC chip 110 through the redistribution circuit structure 130 as wellas the backside redistribution circuit structure 150, the through via170 and the through via 180. The insulating encapsulation 120 mayencapsulate the RFIC chip 110 and surround the through via 180 betweenthe redistribution circuit structure 130 and the backside redistributioncircuit structure 150. The isolating layer 160 is formed between theantenna 140 and the backside redistribution circuit structure 150 andsurrounds the through via 170.

Thereafter, as shown in FIG. 15, a microwave director array 420including a plurality of microwave directors 200′ connected to oneanother is formed on the package array 410. The microwave director array420 is formed on the package array 410 in a manner that each microwavedirector 200′ is located above one of the INFO package units 100′. Insome embodiments, the INFO package units 100′ do not share the microwavedirector 200′ and one microwave director 200′ may be substantiallylocated over a single INFO package unit 100′. In some embodiments, anumber of the INFO packages 100 may be identical to a number of themicrowave directors 200′.

Subsequently, a singulation process may be performed to cut the packagearray 410 with the microwave director array 420 thereon into a packagestructure 10′ as shown in FIG. 16. The package structure 10′ includes anINFO package 100 and a microwave director 200′ thereon. In someembodiments, by modifying the cutting path of the singulation process,the package structure 10′ may include multiple INFO packages 100 andmultiple microwave directors 200′, wherein the multiple INFO packages100 may be integrally packaged by using a common isolation layer and acommon insulating encapsulation, and each microwave director 200′ may belocated above one INFO package 100, such that one antenna 140 may belocated between one microwave director 200′ and one RFIC chip 110. Insome embodiments, the microwave director 200′ may have a structuresimilar to the microwave director 200 shown in FIG. 1. In somealternative embodiments, the microwave director 200′ may have astructure similar to the microwave director 202 shown in FIG. 3. In somefurther embodiments, the microwave director 200′ may have otherstructures capable of directing the microwave received or generated bythe antenna 140.

FIG. 17 and FIG. 18 schematically illustrate a method of fabricating amicrowave director in accordance with some embodiments of thedisclosure. As shown in FIG. 17, an irradiating process is performed ona photosensitive dielectric material layer 500 using a gray tone mask510. The gray tone mask 510 is located between a light source (notshown) and the photosensitive dielectric material layer 500 and a lightL from the light source (not shown) passes the gray tone mask 510 priorto irradiate onto the photosensitive dielectric material layer 500. Thegray tone mask 510 may include a plurality of sections 510A, 510B and510C, where a transmittance of the section 510A is greater than atransmittance of the section 510B and the transmittance of the section510B is greater than a transmittance of the section 510C. Therefore,portions of the photosensitive dielectric layer 500 corresponding to thesections 510A, 510B and 510C are subjected to different lightirradiation intensities. After the irradiating process, a developingprocess and a curing process are performed to form a microwave directorarray 520 having a plurality of microwave directors 530 connected to oneanother as shown in FIG. 18. In some embodiment, the microwave directorarray 520 may be served as the microwave director array 420 in theprocess depicted in FIG. 15.

FIG. 19 schematically illustrates a method of fabricating a microwavedirector in accordance with some embodiments of the disclosure. In FIG.19, a molding fixture 600 including mold portions 600A and 600B is usedto form the microwave director array 620. A space may be defined by themold portions 600A and 600B and a moldable material may be filled in thespace defined by the mold portions 600A and 600B. Subsequently, themoldable material is cured to have the shape defined by the moldingportions 600A and 600B, and separated from the molding fixture 600 toform the microwave director array 620. In some embodiment, the microwavedirector array 620 may be served as the microwave director array 420 inthe process depicted in FIG. 15.

FIG. 20 and FIG. 21 schematically illustrate a method of forming amicrowave director array on a package array in accordance with someembodiments of the disclosure. In FIG. 20, the package array 410 similarto that depicted in FIG. 14 is placed in a molding fixture 700. Themolding fixture 700 may include the mold portions 700A and 700B. A spacemay be defined between the mold portions 700A and 700B when the packagearray 410 is placed between the mold portions 700A and 700B. In FIG. 21,a moldable material 710 may be filled in the space defined by the moldportions 700A and 700B. Subsequently, the moldable material 710 is curedto have the shape defined by the mold portions 700A and 700B, andseparated from the molding fixture 700 to form the microwave directorarray (not shown). In some embodiment, the microwave director array 420in the process depicted in FIG. 15 may be fabricated by using theprocess of FIGS. 20 and 21.

FIG. 22 and FIG. 23 schematically illustrate a method of forming amicrowave director array on a package array in accordance with someembodiments of the disclosure. In FIGS. 22 and 23, a three dimensionalprinting apparatus 800 is used for forming the printing material 810 onthe package array 410. The package array 410 may be similar to thatdepicted in FIG. 14. In addition, the printing material 810 is printedin a predetermined path by the three dimensional printing apparatus 800so as to form the microwave director array 820 on the package array 410as shown in FIG. 23. In some embodiment, the microwave director array820 fabricated by using the process depicted in FIGS. 22 and 23 may beserved as the microwave director array 420 in the process depicted inFIG. 15. In addition, the microwave director 202 depicted in FIG. 3 maybe fabricated by using the process of FIGS. 22 and 23.

FIG. 24 schematically illustrates a portion of an electronic device inaccordance with some embodiments of the disclosure. As shown in FIG. 24,an electronic device 900 includes an INFO package 910 bonded on a board920 and a housing 930. The INFO package 910 on the board 920 is disposedin an inner space of the housing 930 and includes an RFIC chip 910A, aredistribution circuit structure 910B, a first antenna 910C and a secondantenna 910D. The first antenna 910C and the second antenna 910D areelectrically connected to the RFIC chip 910A through the redistributioncircuit structure 910B. The first antenna 910C is located at the backside of the RFIC chip 910A and the second antenna 910D is located at thelateral side of the RFIC chip 910A, where the back side of the RFIC chip910A is opposite to the active surface of the RFIC chip 910A. Thehousing 930 has a first microwave directivity enhancement surface 930Alocated in a propagating path of a microwave received or generated bythe first antenna 910C and a second microwave directivity enhancementsurface 930B located in a propagating path of a microwave received orgenerated by the second antenna 910D.

The housing 930 has a concave structure C1 and a concave structure C2 atthe inner surface S of the housing 930. The concave structure C1 ispositioned facing the first antenna 910C to provide the first microwavedirectivity enhancement surface 930A. The concave structure C2 ispositioned facing the second antenna 910D to provide the secondmicrowave directivity enhancement surface 930B. The first antenna 910Cis substantially positioned between the first microwave directivityenhancement surface 930A and the RFIC chip 910A and the second antenna910D is substantially positioned between the second microwavedirectivity enhancement surface 930B and the RFIC chip 910A. In someembodiments, a dielectric material 940 may fill the concave structure C1and a dielectric material 950 may fill the concave structure C2. Thedielectric materials 940 and 950 may be the same material or differentmaterials and may allow a microwave to pass it through. A material ofthe housing 930 may be different from the dielectric material 940 andthe dielectric material 950. In addition, the portion of the housing 930having the concave structure C1 as well as the portion of the housinghaving the concave structure C2 may be made of dielectric material.

The INFO package 910 may further include a backside redistributioncircuit structure 910E, an insulating encapsulation 910F, an isolationlayer 910G and a through via 910H. The insulating encapsulation 910Fencapsulates the RFIC chip 910A and the second antenna 910D. Thebackside redistribution circuit structure 910E is disposed on theinsulating encapsulation 910F and located between the first antenna 910Cand the RFIC chip 910A. The isolation layer 910G is formed between thebackside redistribution circuit structure 910E and the first antenna910C. The backside redistribution circuit structure 910E may beelectrically connected to the redistribution circuit structure 910Bthrough the through via 910H and the first antenna 910C may beelectrically connected to the backside redistribution circuit structure910E through another through via (not shown) such that the first antenna910C is electrically connected to the redistribution circuit structure910B.

FIG. 25 schematically illustrates a cross section of an electronicdevice in accordance with some embodiments of the disclosure. In FIG.25, an electronic device 902 includes an INFO package 912 bonded on aboard 922 and a housing 932. The INFO package 912 on the board 922 isdisposed in an inner space of the housing 932 and includes an RFIC chip912A, a redistribution circuit structure 912B, and an antenna 912C. Theantenna 912C is electrically connected to the RFIC chip 912A through theredistribution circuit structure 912B. The antenna 912C is located atthe back side of the RFIC chip 912A, where the back side of the RFICchip 912A is opposite to the active surface of the RFIC chip 912A. Thehousing 932 has a first microwave directivity enhancement surface 932Alocated at a propagating path of a microwave received or generated bythe antenna 912C. The housing 932 forms a close volume and has arectangular ring shape in the cross section in some embodiments, but thedisclosure is not limited thereto.

The housing 932 has a concave structure C3 at the inner surface S. Theconcave structure C3 is positioned facing the antenna 912C to providethe first microwave directivity enhancement surface 932A. In someembodiments, a dielectric material 942 may fill the concave structureC3. The dielectric material 942 may allow a microwave to pass itthrough. In addition, the portion of the housing 932 having the concavestructure C3 may be made of dielectric material allowing a microwave topass it through.

In some embodiments, the INFO packages 910 and 912 may be similar to theINFO package 100 depicted in FIG. 1. The electronic devices 900 and 902may be portable devices or non-portable devices. For example, theelectronic devices 900 and 902 may include a cellular phone, a smartphone, a smart pad, a tablet, a smart watch, a personal digitalassistant, a portable multimedia player, an MP3 player, an e-book, atelevision, a computer monitor, a laptop, a tablet, a digital camera, acamcorder, a game console, a consumer appliance, an automobile, etc.

In accordance with some embodiments of the present disclosure, A methodincluding the following steps is provided. A reconstructed waferincluding a plurality of INFO package units arranged in array isprovided, wherein each of the INFO package units includes an RFIC chipand an antenna electrically connected to the RFIC chip. A microwavedirector array including a plurality of microwave directors is formedover the reconstructed wafer, wherein each of the microwave directors islocated over one of the INFO package units respectively. A singulationprocess is performed to cut the reconstructed wafer and the microwavedirector array on the reconstructed wafer so as to obtain a plurality ofsingulated package structures.

In accordance with some embodiments of the present disclosure, a methodincluding the following steps is provided. A package array including aplurality of INFO package units, wherein each INFO package unit includesan RFIC chip and an antenna electrically connected to the RFIC chip. Amicrowave director array including a plurality of microwave directors isformed over the package array, wherein each of the microwave directorsbeing located over one of the INFO package units respectively. Each ofthe microwave directors comprises a base portion, an extension portionand a lens portion, the extension portion is located between the lensportion and the antenna, the base portion is located between theextension portion and the antenna, the base portion exceeds theextension portion on the antenna, and the lens portion has the microwavedirectivity enhancement surface.

In accordance with some embodiments of the present disclosure, a methodof fabricating a package structure includes at least the followingsteps. A package array including a plurality of INFO package units isformed, wherein each of the INFO package units includes a radiofrequency integrated circuit (RFIC) chip, a redistribution circuitstructure and an antenna, and the antenna is electrically connected tothe RFIC chip through the redistribution circuit structure. A microwavedirector array on the package array is formed, wherein the microwavedirector array includes a plurality of microwave directors and each ofthe microwave directors is located on one of the INFO packages. Asingulation process is performed to cut the package array with themicrowave director array thereon into a package structure, wherein anantenna of the package structure is located between an RFIC chip of thepackage structure and a microwave director of the package structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method, comprising: providing a reconstructedwafer comprising a plurality of INFO package units arranged in array,each of the INFO package units comprising an RFIC chip and an antennaelectrically connected to the RFIC chip; forming a microwave directorarray comprising a plurality of microwave directors over thereconstructed wafer, each of the microwave directors being located overone of the INFO package units respectively; and performing a singulationprocess to cut the reconstructed wafer and the microwave director arrayon the reconstructed wafer to obtain a plurality of singulated packagestructures.
 2. The method of claim 1, wherein the microwave directors inthe microwave director array are connected to one another beforeperforming the singulation process.
 3. The method of claim 1, whereinforming the microwave director array over the reconstructed wafercomprises: forming a photosensitive dielectric material layer over thereconstructed wafer; and partially removing the photosensitivedielectric material layer by a photolithography process to form themicrowave directors over the reconstructed wafer.
 4. The method of claim3, wherein partially removing the photosensitive dielectric materiallayer by the photolithography process comprises performing anirradiating process, a developing process, and a curing process on thephotosensitive dielectric material layer.
 5. The method of claim 1,wherein forming the microwave director array over the reconstructedwafer comprises: forming the microwave director array by a moldingprocess and attaching the microwave director array onto thereconstructed wafer.
 6. The method of claim 5, wherein the microwavedirector array is formed by a molding fixture and attached onto thereconstructed wafer.
 7. The method of claim 1, wherein forming themicrowave director array over the reconstructed wafer comprises: placingthe reconstructed wafer in a molding fixture; and forming the microwavedirector array over the reconstructed wafer placed in the moldingfixture by a molding process.
 8. The method of claim 1, wherein themicrowave director array is printed over the reconstructed wafer by a 3D(three dimensional) printing process.
 9. A method, comprising: providinga package array comprising a plurality of INFO package units eachcomprising an RFIC chip and an antenna electrically connected to theRFIC chip; and forming a microwave director array comprising a pluralityof microwave directors over the package array, each of the microwavedirectors being located over one of the INFO package units respectively,wherein each of the microwave directors comprises a base portion, anextension portion and a lens portion, the extension portion is locatedbetween the lens portion and the antenna, the base portion is locatedbetween the extension portion and the antenna, the base portion exceedsthe extension portion on the antenna, and the lens portion has themicrowave directivity enhancement surface.
 10. The method of claim 9,wherein forming the microwave director array over the package arraycomprises: depositing a photosensitive dielectric material layer overthe package array; and patterning the photosensitive dielectric materiallayer by a photolithography process to form the microwave directors overthe package array.
 11. The method of claim 10, wherein patterning thephotosensitive dielectric material layer by the photolithography processcomprises: performing an irradiating process on the photosensitivedielectric material layer using a gray tone mask; and after performingthe irradiating process, performing a developing process and a curingprocess form the microwave directors.
 12. The method of claim 9, whereinforming the microwave director array over the package array comprises:forming the microwave director array by a molding process and attachingthe microwave director array onto the package array.
 13. The method ofclaim 12, wherein the microwave director array is formed by a moldingfixture and attached onto the package array.
 14. The method of claim 9,wherein forming the microwave director array over the package arraycomprises: placing the package array in a molding fixture; and formingthe microwave director array over the package array placed in themolding fixture by a molding process.
 15. The method of claim 9, whereinthe microwave director array is printed over the package array by a 3D(three dimensional) printing process.
 16. The method of claim 9 furthercomprising: performing a singulation process to cut the package arrayand the microwave director array on the package array to obtained aplurality of singulated package structures.
 17. The method of claim 16,wherein the microwave directors in the microwave director array areconnected to one another before performing the singulation process. 18.A method of fabricating a package structure, comprising: forming apackage array comprising a plurality of INFO package units, wherein eachof the INFO package units comprises an RFIC chip, a redistributioncircuit structure and an antenna, and the antenna is electricallyconnected to the RFIC chip through the redistribution circuit structure;forming a microwave director array on the package array, wherein themicrowave director array comprises a plurality of microwave directorsand each of the microwave directors is located on a corresponding one ofthe INFO package units; and performing a singulation process to cut thepackage array with the microwave director array thereon into a pluralityof package structures each including one of the INFO package units andthe corresponding one of the microwave directors, wherein an antenna ofeach package structure is located between an RFIC chip of the packagestructure and a microwave director of the package structure.
 19. Themethod of claim 18, wherein the microwave directors in the microwavedirector array are connected to one another before performing thesingulation process.
 20. The method of claim 18, wherein the microwavedirectors are formed by using a photolithography process, a moldingprocess, or a 3D (three dimensional) printing process.